1/5 target data november, 11 2002 LET20015 rf power transistors l dmos e nhanced t echnology in plastic package designed for gsm / edge / is-97 applications ? excellent thermal stability ? common source configuration ? p out = 15 w with 11 db gain @ 2000 mhz ? esd protection ? is-97 cdma performances p out = 2.5 w eff. = 20 % description the LET20015 is a common source n-channel, enhancement-mode lateral field-effect rf power transistor. it is designed for high gain, broad band commercial and industrial applications. it operates at 26 v in common source mode at frequencies up to 2 ghz. LET20015 boasts the excellent gain, linearity and reliability of sts latest ldmos technology mounted in the first true smd plastic rf power package, powerso-10rf. LET20015s superior linearity performance makes it an ideal solution for base station applications. the powerso-10 plastic package, designed to offer high reliability, is the first st jedec approved, high power smd package. it has been specially optimized for rf needs and offers excellent rf performances and ease of assembly. powerso-10rf (formed lead) order code let90015 branding let90015 absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 65 v v gs gate-source voltage -0.5 to +15 v i d drain current 2 a p diss power dissipation (@ tc = 70 c) tbd w tj max. operating junction temperature 165 c t stg storage temperature -65 to +175 c thermal data (t case = 70 c) r th(j-c) junction -case thermal resistance tbd c/w mounting recommendations are available in www.st.com/rf/ (look for application note an1294) pin connection gate source drain
LET20015 2/5 electrical specification (t case = 25 c) static symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 1 ma 65 v i dss v gs = 0 v v ds = 26 v 1 m a i gss v gs = 20 v v ds = 0 v 1 m a v gs(q) v ds = 26 v i d = tbd 2.5 5.0 v v ds(on) v gs = 10 v i d = 1 a tbd v g fs v ds = 10 v i d = 1 a tbd mho c iss v gs = 0 v v ds = 26 v f = 1 mhz tbd pf c oss v gs = 0 v v ds = 26 v f = 1 mhz tbd pf c rss v gs = 0 v v ds = 26 v f = 1 mhz tbd pf symbol test conditions min. typ. max. unit dynamic ( f = 2000 mhz ) p 1db v dd = 26 v i dq = tbd 15 w g ps v dd = 26 v i dq = tbd p out = 15 w 11 13 db h d v dd = 26 v i dq = tbd p out = 15 w 45 50 % imd3 (1) v dd = 26 v i dq = tbd p out = 15 w pep -32 -28 dbc load mismatch v dd = 26 v i dq = tbd p out = 15 w all phase angles 10:1 vswr dynamic ( f = 1930 - 1990 mhz ) p out (2) v dd = 26 v i dq = tbd 10 15 w g ps v dd = 26 v i dq = tbd p out = 15 w 11 13 db h d (2) v dd = 26 v i dq = tbd p out = 15 w 40 45 % p out(cdma) (3) 885 khz < -47 dbc 1.25 mhz < -55 dbc 2.25 mhz < -55 dbc 2.5 w h d(cdma) (3) 885 khz < -47 dbc 1.25 mhz < -55 dbc 2.25 mhz < -55 dbc 20 % (1) f 1 = 2000 mhz, f 2 = 2000.1 mhz (3) is-97 cdma pilot, sync, paging, traffic, codes 8 thru 13 (2) 1 db compression point
3/5 LET20015 powerso-10rf straight lead mechanical data critical dimensions: - overall width (l) note (1): resin protrusions not included (max value: 0.15 mm per side) mm inch min. typ. max min. typ. max a1 1.62 1.67 1.72 0.064 0.065 0.068 a2 3.4 3.5 3.6 0.134 0.137 0.142 a3 1.2 1.3 1.4 0.046 0.05 0.054 a4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 d 9.4 9.5 9.6 0.370 0.374 0.377 d1 7.4 7.5 7.6 0.290 0.295 0.298 e 15.15 15.4 15.65 0.595 0.606 0.615 e1 9.3 9.4 9.5 0.365 0.37 0.375 e2 7.3 7.4 7.5 0.286 0.292 0.294 e3 5.9 6.1 6.3 0.231 0.24 0.247 f 0.5 0.019 g 1.2 0.047 r1 0.25 0.01 r2 0.8 0.031 t1 6 deg 6 deg t2 10 deg 10 deg dim.
LET20015 4/5 powerso-10rf formed lead (gull wing) mechanical data mm inch min. typ. max min. typ. max a1 0 0.05 0.1 0. 0.0019 0.0038 a2 3.4 3.5 3.6 0.134 0.137 0.142 a3 1.2 1.3 1.4 0.046 0.05 0.054 a4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 d 9.4 9.5 9.6 0.370 0.374 0.377 d1 7.4 7.5 7.6 0.290 0.295 0.298 e 13.85 14.1 14.35 0.544 0.555 0.565 e1 9.3 9.4 9.5 0.365 0.37 0.375 e2 7.3 7.4 7.5 0.286 0.292 0.294 e3 5.9 6.1 6.3 0.231 0.24 0.247 f 0.5 0.019 g 1.2 0.047 l 0.8 1 1.1 0.030 0.039 0.042 r1 0.25 0.01 r2 0.8 0.031 t 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg t1 6 deg 6 deg t2 10 deg 10 deg dim. note (1): resin protrusions not included (max value: 0.15 mm per side) critical dimensions: - stand-off (a1) - overall width (l)
5/5 LET20015 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. htt p ://www.st.com
|
